caa a22 4500 445829125 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0346-5 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0346-5 Effect of intermetallic growth rate on spontaneous whisker growth from a tin coating on copper [Elektronische Daten] [Alongheng Baated, Keun-Soo Kim, Katsuaki Suganuma] Intermetallic compound (IMC) growth at the interface between a Sn coating and a Cu substrate with or without a Ni underlayer and its related stress state was evaluated by real-time measurements using the flexure beam method. For the Sn coating without a Ni underlayer, pyramid-shaped IMC grains of Cu6Sn5 grew along the grain boundaries of Sn from the Cu substrate, especially at the triple grain boundary junctions and the IMC grains rapidly increased their volume during the initial 3days, During this time, the IMC growth rate was 2.3μm3/day and the compressive stress in the Sn coating rapidly developed and became saturated at about −11MPa. In contrast, platelet IMC grains of Ni3Sn4 formed at the surface of the Ni underlayer and the IMCs grew at a rate of 1.0μm3/day for the Sn/Ni coating. In addition, the stress in the Sn coating with a Ni underlayer remained low, slightly tensile and no whiskers were formed on the Sn plating. Therefore, the IMC growth rate and shape are key factors that affect the mechanism of Sn whisker growth during room temperature storage. Springer Science+Business Media, LLC, 2011 Baated Alongheng Graduate School of Engineering, Osaka University, Osaka, Japan aut Kim Keun-Soo Institute of Scientific and Industrial Research, Osaka University, 8-1Mihogaoka, 567-0047, Ibaraki, Osaka, Japan aut Suganuma Katsuaki Institute of Scientific and Industrial Research, Osaka University, 8-1Mihogaoka, 567-0047, Ibaraki, Osaka, Japan aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1685-1693 0957-4522 22:11<1685 2011 22 10854 https://doi.org/10.1007/s10854-011-0346-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0346-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Baated Alongheng Graduate School of Engineering, Osaka University, Osaka, Japan aut NATIONALLICENCE 700 1- Kim Keun-Soo Institute of Scientific and Industrial Research, Osaka University, 8-1Mihogaoka, 567-0047, Ibaraki, Osaka, Japan aut NATIONALLICENCE 700 1- Suganuma Katsuaki Institute of Scientific and Industrial Research, Osaka University, 8-1Mihogaoka, 567-0047, Ibaraki, Osaka, Japan aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1685-1693 0957-4522 22:11<1685 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer