caa a22 4500 445829141 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0345-6 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0345-6 Synthesis and characterization of nanostructured SnO2 film [Elektronische Daten] [D. Qader, Raid Ismail, Ahmed Mossa, Khaleel Hassoon] Nanostructured tin dioxide (SnO2) film was deposited on glass substrate by thermal evaporation of tin metal followed by thermal oxidation at 600°C for 2h. XRD investigation confirms that grown film is crystalline tetragonal rutile. The average optical transmittance of the film was as high as 90%. The optical band gap of the nanostructured SnO2 was estimated from transmittance data and found to be 3.4eV. The variation of electrical conductivity with temperature was investigated. The root mean square (RMS) roughness and topography of the film were investigated by atomic force microscopy and found to be 2nm with grain size of 17nm. Springer Science+Business Media, LLC, 2011 Qader D. Center of Nanotechnology, University of Technology, Baghdad, Iraq aut Ismail Raid Applied Science Department, University of Technology, Baghdad, Iraq aut Mossa Ahmed Center of Nanotechnology, University of Technology, Baghdad, Iraq aut Hassoon Khaleel Applied Science Department, University of Technology, Baghdad, Iraq aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1681-1684 0957-4522 22:11<1681 2011 22 10854 https://doi.org/10.1007/s10854-011-0345-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0345-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Qader D. Center of Nanotechnology, University of Technology, Baghdad, Iraq aut NATIONALLICENCE 700 1- Ismail Raid Applied Science Department, University of Technology, Baghdad, Iraq aut NATIONALLICENCE 700 1- Mossa Ahmed Center of Nanotechnology, University of Technology, Baghdad, Iraq aut NATIONALLICENCE 700 1- Hassoon Khaleel Applied Science Department, University of Technology, Baghdad, Iraq aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1681-1684 0957-4522 22:11<1681 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer