caa a22 4500 445829176 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0342-9 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0342-9 Dye-sensitized ZnO nanorod based photoelectrochemical solar cells with natural dyes extracted from Ixora coccinea, Mulberry and Beetroot [Elektronische Daten] [M. Thambidurai, N. Muthukumarasamy, Velauthapillai, Dhayalan, N. Sabari Arul, S. Agilan, R. Balasundaraprabhu] ZnO nanorods have been prepared on indium tin oxide (ITO) glass substrates coated with sol-gel based ZnO seed layer through chemical method. Natural dyes (Ixora coccinea, Mulberry and Beetroot) have been used for the fabrication of dye sensitized solar cells. The surface morphology studied using scanning electron microscope shows that the vertically aligned ZnO nanorods are of hexagonal shape. The solar cell efficiency has been calculated and is found to be 0.33, 0.41 and 0.28% for Ixora coccinea, Mulberry and Beetroot extract dye sensitized solar cells. Springer Science+Business Media, LLC, 2011 Thambidurai M. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India aut Muthukumarasamy N. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India aut Dhayalan Velauthapillai, Department of Engineering, University College of Bergen, Bergen, Norway aut Sabari Arul N. Department of Nanoscience and Technology, Bharathiar University, Coimbatore, India aut Agilan S. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India aut Balasundaraprabhu R. Department of Physics, PSG College of Technology, Coimbatore, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1662-1666 0957-4522 22:11<1662 2011 22 10854 https://doi.org/10.1007/s10854-011-0342-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0342-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Thambidurai M. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India aut NATIONALLICENCE 700 1- Muthukumarasamy N. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India aut NATIONALLICENCE 700 1- Dhayalan Velauthapillai Department of Engineering, University College of Bergen, Bergen, Norway aut NATIONALLICENCE 700 1- Sabari Arul N. Department of Nanoscience and Technology, Bharathiar University, Coimbatore, India aut NATIONALLICENCE 700 1- Agilan S. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India aut NATIONALLICENCE 700 1- Balasundaraprabhu R. Department of Physics, PSG College of Technology, Coimbatore, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1662-1666 0957-4522 22:11<1662 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer