caa a22 4500 445829184 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0343-8 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0343-8 Temperature dependence of the dielectric properties of mesoporous silica films prepared by a sol-gel route in the presence of polyether modified polydimethylsiloxane [Elektronische Daten] [Dong Dong, Ni Wang, Xiaobo Liu, Weidong Xue, Wencheng Hu] Mesoporous silica films were prepared from tetraethylorthosilicate by an acid-catalyzed sol-gel process in the presence of side-chain polyether modified polydimethylsiloxane. The samples were characterized using Fourier transform infrared spectroscopy, differential thermal analysis and thermogravimetric analysis, field emission scanning electron microscopy, and atomic force microscopy. Furthermore, the dielectric properties of the silica films annealed at different temperatures were investigated at frequencies ranging from 1 to 200kHz. In addition, the temperature dependence of the dielectric properties of as-prepared porous silica films is discussed in detail. Springer Science+Business Media, LLC, 2011 Dong Dong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut Wang Ni State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut Liu Xiaobo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut Xue Weidong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut Hu Wencheng State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1667-1673 0957-4522 22:11<1667 2011 22 10854 https://doi.org/10.1007/s10854-011-0343-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0343-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dong Dong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Wang Ni State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Liu Xiaobo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Xue Weidong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Hu Wencheng State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1667-1673 0957-4522 22:11<1667 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer