caa a22 4500 445829206 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0353-6 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0353-6 Well-aligned ZnO nanorod arrays from diameter-controlled growth and their application in inverted polymer solar cell [Elektronische Daten] [Zhaolin Yuan, Junsheng Yu, Nana Wang, Yadong Jiang] Well-aligned ZnO nanorod arrays (ZNAs) with various growth time were fabricated on indium tin oxide (ITO) coated glass substrate using hydrothermal method. The average diameter of the ZnO nanorods ranged from 35 to 100nm with elongating growth time from 0.5 to 3h. The ZNAs had wurtzite-structured (hexagonal) ZnO and preferred growth along (0001) direction. When growth time was less than 2h, the ZNAs showed very high optical transmission (>80%) in visible light region. The formation of Ohmic contact between ZNAs and the substrates was also observed. Furthermore, solar cells consisted of ZNAs/polymer hybrid were fabricated, and a highest power conversion efficiency (PCE) of 1.11% from these devices was achieved. Moreover, The PCE of this device almost remained constant for long time when exposed to ambient atmosphere. Springer Science+Business Media, LLC, 2011 Yuan Zhaolin School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut Yu Junsheng School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut Wang Nana School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut Jiang Yadong School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1730-1735 0957-4522 22:11<1730 2011 22 10854 https://doi.org/10.1007/s10854-011-0353-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0353-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yuan Zhaolin School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Yu Junsheng School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Wang Nana School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Jiang Yadong School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1730-1735 0957-4522 22:11<1730 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer