caa a22 4500 445866128 CHVBK 20180317145458.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1140/epjd/e2011-10513-x doi (NATIONALLICENCE)springer-10.1140/epjd/e2011-10513-x Photoluminescence dynamics of organic molecule-passivated Si nanoclusters [Elektronische Daten] [M. Imamura, J. Nakamura, S. Fujimasa, H. Yasuda, H. Kobayashi, Y. Negishi] The size-selected phenyl-passivated Si nanoclusters with the mean diameters of 1.5 and 1.3nm have been prepared in the solution route. The intense PL observed in Si nanoclusters, in which the band gap energies increase up to approximately 4eV, originates from electron-hole pair recombination. From time-resolved PL, two kinds of exponential PL decay components with fast and slow lifetime were observed. The identical decays with slow lifetime will be derived from the surface states of Si nanoclusters passivated by phenyl molecules. The size-dependent zero-phonon assisted optical transitions by quantum size effects occur at a high rate of sub-nanosecond timescale. EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg, 2011 Imamura M. Synchrotron Light Application Center/Saga University, 1 Honjo, 840-8502, Saga, Japan aut Nakamura J. Department of Mechanical Engineering/Kobe University, Nada-ku, Kobe, Japan aut Fujimasa S. Department of Mechanical Engineering/Kobe University, Nada-ku, Kobe, Japan aut Yasuda H. Research Center for Ultra-High Voltage Electron Microscopy/Osaka University, Ibaraki, Osaka, Japan aut Kobayashi H. Department of Applied Chemistry/Tokyo University of Science, Shinjuku, Tokyo, Japan aut Negishi Y. Department of Applied Chemistry/Tokyo University of Science, Shinjuku, Tokyo, Japan aut The European Physical Journal D Springer-Verlag 63/2(2011-07-01), 289-292 1434-6060 63:2<289 2011 63 10053 https://doi.org/10.1140/epjd/e2011-10513-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1140/epjd/e2011-10513-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Imamura M. Synchrotron Light Application Center/Saga University, 1 Honjo, 840-8502, Saga, Japan aut NATIONALLICENCE 700 1- Nakamura J. Department of Mechanical Engineering/Kobe University, Nada-ku, Kobe, Japan aut NATIONALLICENCE 700 1- Fujimasa S. Department of Mechanical Engineering/Kobe University, Nada-ku, Kobe, Japan aut NATIONALLICENCE 700 1- Yasuda H. Research Center for Ultra-High Voltage Electron Microscopy/Osaka University, Ibaraki, Osaka, Japan aut NATIONALLICENCE 700 1- Kobayashi H. Department of Applied Chemistry/Tokyo University of Science, Shinjuku, Tokyo, Japan aut NATIONALLICENCE 700 1- Negishi Y. Department of Applied Chemistry/Tokyo University of Science, Shinjuku, Tokyo, Japan aut NATIONALLICENCE 773 0- The European Physical Journal D Springer-Verlag 63/2(2011-07-01), 289-292 1434-6060 63:2<289 2011 63 10053 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer