caa a22 4500 445866926 CHVBK 20180317145500.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1140/epjd/e2011-20503-7 doi (NATIONALLICENCE)springer-10.1140/epjd/e2011-20503-7 Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation [Elektronische Daten] [X. Landreau, B. Lanfant, T. Merle, E. Laborde, C. Dublanche-Tixier, P. Tristant] SiO x H y C z nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0°C; 120°C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30°C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiO x H y C z nanostructure arrays on nanoindented Si (100) templates. The first results are discussed. EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg, 2011 Landreau X. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut Lanfant B. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut Merle T. SPCTS, CEC, 12 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut Laborde E. SPCTS, CEC, 12 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut Dublanche-Tixier C. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut Tristant P. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut The European Physical Journal D Springer-Verlag 65/3(2011-12-01), 421-428 1434-6060 65:3<421 2011 65 10053 https://doi.org/10.1140/epjd/e2011-20503-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1140/epjd/e2011-20503-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Landreau X. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut NATIONALLICENCE 700 1- Lanfant B. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut NATIONALLICENCE 700 1- Merle T. SPCTS, CEC, 12 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut NATIONALLICENCE 700 1- Laborde E. SPCTS, CEC, 12 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut NATIONALLICENCE 700 1- Dublanche-Tixier C. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut NATIONALLICENCE 700 1- Tristant P. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France aut NATIONALLICENCE 773 0- The European Physical Journal D Springer-Verlag 65/3(2011-12-01), 421-428 1434-6060 65:3<421 2011 65 10053 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer