caa a22 4500 445868058 CHVBK 20180317145504.0 cr unu---uuuuu 170323e20110201xx s 000 0 eng 10.1140/epjd/e2010-10455-9 doi (NATIONALLICENCE)springer-10.1140/epjd/e2010-10455-9 Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field [Elektronische Daten] [B. Lal, P. Aghamkar, S. Kumar, M. K. Kashyap] Abstract.: A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6μm CO2 laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B 0 = 14.1T, the second-order susceptibility was found to be 3.4 × 10-7 (SI unit) near the resonance condition. EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg, 2011 Lal B. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India aut Aghamkar P. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India aut Kumar S. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India aut Kashyap M. K. Department of Physics, Kurukshetra University, 136119, Kurukshetra, India aut The European Physical Journal D Springer-Verlag 61/3(2011-02-01), 717-724 1434-6060 61:3<717 2011 61 10053 https://doi.org/10.1140/epjd/e2010-10455-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1140/epjd/e2010-10455-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lal B. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India aut NATIONALLICENCE 700 1- Aghamkar P. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India aut NATIONALLICENCE 700 1- Kumar S. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India aut NATIONALLICENCE 700 1- Kashyap M. K. Department of Physics, Kurukshetra University, 136119, Kurukshetra, India aut NATIONALLICENCE 773 0- The European Physical Journal D Springer-Verlag 61/3(2011-02-01), 717-724 1434-6060 61:3<717 2011 61 10053 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer