Dependence of the brightness of the radiation of diffused p-n junctions in silicon carbide on the injection current density

Verfasser / Beitragende:
[I. Kryachko]
Ort, Verlag, Jahr:
1968
Enthalten in:
Soviet Physics Journal, 11/12(1968-12-01), 110-112
Format:
Artikel (online)
ID: 450347478