Effect of substrate temperature during deposition on the current carrier mobility and density in germanium films recrystallized by an electron beam

Verfasser / Beitragende:
[V. Tyushev, A. Kondratov, Yu. Timofeev]
Ort, Verlag, Jahr:
1968
Enthalten in:
Soviet Physics Journal, 11/8(1968-08-01), 118-120
Format:
Artikel (online)
ID: 450348830