Statistical features of the avalanche multiplication build-up in semiconductors with different coefficients of impact ionization

Verfasser / Beitragende:
[A. Verkhovtseva, I. Vanyushin, V. Gergel', A. Zelenyi, V. Zimoglyad, Yu. Tishin]
Ort, Verlag, Jahr:
2009
Enthalten in:
Journal of Communications Technology and Electronics, 54/11(2009-11-01), 1331-1336
Format:
Artikel (online)
ID: 453667481