caa a22 4500 463210921 CHVBK 20180405153140.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3962-4 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3962-4 On the role of group I elements in ZnO [Elektronische Daten] [B.K. Meyer, J. Stehr, A. Hofstaetter, N. Volbers, A. Zeuner, J. Sann] Diffusion of Li, Na and K into single-crystal substrates of ZnO was performed. We compare the results with ZnO epitaxial films doped with the respective elements during growth. The diffused and in-situ doped layers were studied using mass spectroscopy and low temperature photoluminescence spectroscopy. Li and Na are known to produce deep acceptor centers which give rise to shallow donor to deep acceptor recombinations in the visible spectral region. We will demonstrate that shallow acceptors are also introduced, having binding energies around 300meV. A donor-acceptor pair recombination (zero phonon line at 3.05eV) with LO phonon replica is observed. We further investigated bulk ZnO crystals which contained the deep Li acceptor by thermal treatments under H2 atmospheres. With increasing annealing temperature shallow donors are introduced as monitored by EPR while the EPR signal of the neutral Li acceptors decreases. Quite unexpectedly, the shallow Li acceptor centre which is not present in the as-grown state is also created. Springer-Verlag, 2007 Meyer B.K. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Stehr J. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Hofstaetter A. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Volbers N. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Zeuner A. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Sann J. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 119-123 0947-8396 88:1<119 2007 88 339 https://doi.org/10.1007/s00339-007-3962-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3962-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Meyer B.K. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Stehr J. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Hofstaetter A. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Volbers N. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Zeuner A. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Sann J. I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 119-123 0947-8396 88:1<119 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer