caa a22 4500 463210999 CHVBK 20180405153140.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3966-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3966-0 Donor-like defects in ZnO substrate materials and ZnO thin films [Elektronische Daten] [H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann] We have investigated donor-like defects in ZnO substrate material grown by three different methods, and in epitaxial ZnO thin films grown on sapphire by pulsed laser deposition. Temperature dependent Hall effect measurements yield information about dominant donors. The thermal activation energies lie in a wide range from about 20meV to about 370meV. Deep level transient spectroscopy is used to obtain parameters of deep donor-like defects. For that, a high-speed diode contact configuration was laid out for the epitaxial thin films in order to determine the defect parameters with high precision. The identified levels are E1, E3 and E4, though the level E4 is observed only in single crystals grown by seeded chemical vapor transport. Springer-Verlag, 2007 von Wenckstern H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Brandt M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Schmidt H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Biehne G. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Pickenhain R. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Hochmuth H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Lorenz M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Grundmann M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 135-139 0947-8396 88:1<135 2007 88 339 https://doi.org/10.1007/s00339-007-3966-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3966-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- von Wenckstern H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Brandt M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Schmidt H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Biehne G. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Pickenhain R. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Hochmuth H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Lorenz M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Grundmann M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 135-139 0947-8396 88:1<135 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer