caa a22 4500 463211006 CHVBK 20180405153140.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3970-4 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3970-4 Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD [Elektronische Daten] [S. Agouram, J. Zuñiga Perez, V. Muñoz-Sanjosé] ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. Springer-Verlag, 2007 Agouram S. Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain aut Zuñiga Perez J. Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain aut Muñoz-Sanjosé V. Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 83-87 0947-8396 88:1<83 2007 88 339 https://doi.org/10.1007/s00339-007-3970-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3970-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Agouram S. Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain aut NATIONALLICENCE 700 1- Zuñiga Perez J. Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain aut NATIONALLICENCE 700 1- Muñoz-Sanjosé V. Departamento de Física Aplicada y Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 83-87 0947-8396 88:1<83 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer