caa a22 4500 463211014 CHVBK 20180405153140.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3982-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3982-0 Galvanomagnetic transport properties of nitrogenated (La,Sr)MnO3-δ and LaMnO3-δ [Elektronische Daten] [M. von Kreutzbruck, G. Lembke, C. Korte, B. Franz] Epitaxial thin films of nitrogenated La0.65Sr0.30MnO3 were grown on MgO(100) substrates by pulsed laser deposition (PLD). The nitrogenation was achieved by a continuous nitrogen flow in the PLD chamber with pressures of up to 0.12mbar. The chemical analysis of the samples regarding the exchange of oxygen by nitrogen was achieved by time of flight secondary ion mass spectrometry, sputtered neutral mass spectrometry (SNMS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) and yielded a content of incorporated nitrogen ranging from 0.6% to 3.8%. Without nitrogenation the electrical resistivity of La0.65Sr0.30MnO3 exhibited a metal-insulator (MI) transition at about 180K. The magnetoresistance (MR) effect (ΔR/R(0)) was about -50% at the transition temperature. Our nitrogen contents affected the MI transition so as to completely disappear and resulted in a resistivity increase of more than three orders of magnitude as well. By carefully reoxidizing the samples with subsequent heat treatments in air the MI transition reappeared at lower temperatures and we found a continuously enhanced MR ratio for decreasing temperatures. MR ratios of more than -99% were observed for a magnetic field of 10T. The results are interpreted as a percolation phenomenon of ferromagnetic-metallic domains within an antiferromagnetic-semiconducting matrix. Springer-Verlag, 2007 von Kreutzbruck M. Institut für Angewandte Physik, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Lembke G. Institut für Angewandte Physik, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut Korte C. Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 58, 35392, Giessen, Germany aut Franz B. Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 58, 35392, Giessen, Germany aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 201-208 0947-8396 88:1<201 2007 88 339 https://doi.org/10.1007/s00339-007-3982-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3982-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- von Kreutzbruck M. Institut für Angewandte Physik, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Lembke G. Institut für Angewandte Physik, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Korte C. Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 58, 35392, Giessen, Germany aut NATIONALLICENCE 700 1- Franz B. Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 58, 35392, Giessen, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 201-208 0947-8396 88:1<201 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer