caa a22 4500 463211049 CHVBK 20180405153140.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3975-z doi (NATIONALLICENCE)springer-10.1007/s00339-007-3975-z ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition [Elektronische Daten] [D.J. Rogers, F. Hosseini Teherani, A. Largeteau, G. Demazeau, C. Moisson, D. Turover, J. Nause, G. Garry, R. Kling, T. Gruber, A. Waag, F. Jomard, P. Galtier, A. Lusson, T. Monteiro, M.J. Soares, A. Neves, M.C. Carmo, M. Peres, G. Lerondel, C. Hubert] 2cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) Ω scan full width half maximum (FWHM) of 67arcsec and an root mean square (RMS) roughness of 2Å. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) Ω and 2θ/Ω WHM of 124 and 34arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9nm) as confirmed by fringes in the XRD 2θ/Ω scan. It was suggested that the improvement in XRD response relative to the substrate might be due to "healing” of sub-surface polishing damage due to the elevated Ts used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. Springer-Verlag, 2007 Rogers D.J. Nanovation SARL, 103bis, rue de Versailles, 91400, Orsay, France aut Hosseini Teherani F. Nanovation SARL, 103bis, rue de Versailles, 91400, Orsay, France aut Largeteau A. ICMCB-CNRS, Bordeaux 1 University (Science & Technology), 87 Av. A. Schweitzer, 33608, Pessac, France aut Demazeau G. ICMCB-CNRS, Bordeaux 1 University (Science & Technology), 87 Av. A. Schweitzer, 33608, Pessac, France aut Moisson C. Novasic, Savoie Technolac, Arche Bât. 4, BP 267, 73375, Le Bourget du Lac, France aut Turover D. Novasic, Savoie Technolac, Arche Bât. 4, BP 267, 73375, Le Bourget du Lac, France aut Nause J. Cermet Inc., 1019 Collier Road, 30318, Atlanta, GA, USA aut Garry G. Domaine de Corbeville, Thales Research, 91401, Orsay, France aut Kling R. Department of Semiconductor Physics, Ulm University, 89069, Ulm, Germany aut Gruber T. Department of Semiconductor Physics, Ulm University, 89069, Ulm, Germany aut Waag A. Institute of Semiconductor Technology, Braunschweig Technical University, 38106, Braunschweig, Germany aut Jomard F. LPSC-CNRS, 1 Place Aristide Briand, 92195, Meudon, France aut Galtier P. LPSC-CNRS, 1 Place Aristide Briand, 92195, Meudon, France aut Lusson A. LPSC-CNRS, 1 Place Aristide Briand, 92195, Meudon, France aut Monteiro T. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut Soares M.J. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut Neves A. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut Carmo M.C. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut Peres M. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut Lerondel G. Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, 10010, Troyes, France aut Hubert C. Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, 10010, Troyes, France aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 49-56 0947-8396 88:1<49 2007 88 339 https://doi.org/10.1007/s00339-007-3975-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3975-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rogers D.J. Nanovation SARL, 103bis, rue de Versailles, 91400, Orsay, France aut NATIONALLICENCE 700 1- Hosseini Teherani F. Nanovation SARL, 103bis, rue de Versailles, 91400, Orsay, France aut NATIONALLICENCE 700 1- Largeteau A. ICMCB-CNRS, Bordeaux 1 University (Science & Technology), 87 Av. A. Schweitzer, 33608, Pessac, France aut NATIONALLICENCE 700 1- Demazeau G. ICMCB-CNRS, Bordeaux 1 University (Science & Technology), 87 Av. A. Schweitzer, 33608, Pessac, France aut NATIONALLICENCE 700 1- Moisson C. Novasic, Savoie Technolac, Arche Bât. 4, BP 267, 73375, Le Bourget du Lac, France aut NATIONALLICENCE 700 1- Turover D. Novasic, Savoie Technolac, Arche Bât. 4, BP 267, 73375, Le Bourget du Lac, France aut NATIONALLICENCE 700 1- Nause J. Cermet Inc., 1019 Collier Road, 30318, Atlanta, GA, USA aut NATIONALLICENCE 700 1- Garry G. Domaine de Corbeville, Thales Research, 91401, Orsay, France aut NATIONALLICENCE 700 1- Kling R. Department of Semiconductor Physics, Ulm University, 89069, Ulm, Germany aut NATIONALLICENCE 700 1- Gruber T. Department of Semiconductor Physics, Ulm University, 89069, Ulm, Germany aut NATIONALLICENCE 700 1- Waag A. Institute of Semiconductor Technology, Braunschweig Technical University, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Jomard F. LPSC-CNRS, 1 Place Aristide Briand, 92195, Meudon, France aut NATIONALLICENCE 700 1- Galtier P. LPSC-CNRS, 1 Place Aristide Briand, 92195, Meudon, France aut NATIONALLICENCE 700 1- Lusson A. LPSC-CNRS, 1 Place Aristide Briand, 92195, Meudon, France aut NATIONALLICENCE 700 1- Monteiro T. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut NATIONALLICENCE 700 1- Soares M.J. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut NATIONALLICENCE 700 1- Neves A. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut NATIONALLICENCE 700 1- Carmo M.C. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut NATIONALLICENCE 700 1- Peres M. Physics Department, University of Aveiro, 3810-193, Aveiro, Portugal aut NATIONALLICENCE 700 1- Lerondel G. Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, 10010, Troyes, France aut NATIONALLICENCE 700 1- Hubert C. Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, 10010, Troyes, France aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 49-56 0947-8396 88:1<49 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer