caa a22 4500 463211154 CHVBK 20180405153141.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3959-z doi (NATIONALLICENCE)springer-10.1007/s00339-007-3959-z H2O2-molecular beam epitaxy of high quality ZnO [Elektronische Daten] [A. El Shaer, A. Bakin, A. Che Mofor, J. Bläsing, A. Krost, J. Stoimenos, B. Pécz, M. Kreye, A. Waag] We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H2O2-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphirewith a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H2O2-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. Springer-Verlag, 2007 El Shaer A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Bakin A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Che Mofor A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Bläsing J. Institute of Experimental Physics, Otto-von-Guericke-University, 39016, Magdeburg, Germany aut Krost A. Institute of Experimental Physics, Otto-von-Guericke-University, 39016, Magdeburg, Germany aut Stoimenos J. Physics Department, Aristotele University, Univ. Campus, 54006, Thessaloniki, Greece aut Pécz B. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525, Budapest, Hungary aut Kreye M. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Waag A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 57-60 0947-8396 88:1<57 2007 88 339 https://doi.org/10.1007/s00339-007-3959-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3959-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- El Shaer A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Bakin A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Che Mofor A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Bläsing J. Institute of Experimental Physics, Otto-von-Guericke-University, 39016, Magdeburg, Germany aut NATIONALLICENCE 700 1- Krost A. Institute of Experimental Physics, Otto-von-Guericke-University, 39016, Magdeburg, Germany aut NATIONALLICENCE 700 1- Stoimenos J. Physics Department, Aristotele University, Univ. Campus, 54006, Thessaloniki, Greece aut NATIONALLICENCE 700 1- Pécz B. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Kreye M. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Waag A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 57-60 0947-8396 88:1<57 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer