caa a22 4500 463211170 CHVBK 20180405153141.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3965-1 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3965-1 Properties of phosphorus doped ZnO [Elektronische Daten] [H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H. Schmidt, J. Lenzner, M. Lorenz, A.Y. Kuznetsov, B.K. Meyer, M. Grundmann] We report the electrical and optical properties of P-doped epitaxial ZnO thin films grown heteroepitaxially on sapphire substrates or homoepitaxially on ZnO wafers grown by the hydrothermal method, respectively. As-grown heteroepitaxial thin films exhibit semi-insulating to strongly n-conducting behavior depending on the P-content and the oxygen partial pressure applied during deposition. New features are observed in the recombination spectra compared to nominally undoped ZnO thin films. The spectral position of these new features also depends on the growth conditions making a clear correlation between P-incorporation and particular spectral features feasible. For the homoepitaxially grown thin films lateral scanning capacitance microscopy measurements revealed areas of both n- and p-type majority carriers. Springer-Verlag, 2007 von Wenckstern H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Benndorf G. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Heitsch S. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Sann J. I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392, Gießen, Germany aut Brandt M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Schmidt H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Lenzner J. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Lorenz M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Kuznetsov A.Y. Department of Physics, University of Oslo, P.O. Box 1048, Blindern, 0316, Oslo, Norway aut Meyer B.K. I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392, Gießen, Germany aut Grundmann M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 125-128 0947-8396 88:1<125 2007 88 339 https://doi.org/10.1007/s00339-007-3965-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3965-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- von Wenckstern H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Benndorf G. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Heitsch S. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Sann J. I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392, Gießen, Germany aut NATIONALLICENCE 700 1- Brandt M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Schmidt H. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Lenzner J. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Lorenz M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 700 1- Kuznetsov A.Y. Department of Physics, University of Oslo, P.O. Box 1048, Blindern, 0316, Oslo, Norway aut NATIONALLICENCE 700 1- Meyer B.K. I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392, Gießen, Germany aut NATIONALLICENCE 700 1- Grundmann M. Institut für Experimentelle Physik II, Universtät Leipzig, Linnéstr. 5, 04103, Leipzig, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 125-128 0947-8396 88:1<125 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer