caa a22 4500 463211251 CHVBK 20180405153141.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s00339-007-3961-5 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3961-5 Vapour transport growth of ZnO nanorods [Elektronische Daten] [A.C. Mofor, A.S. Bakin, A. Elshaer, D. Fuhrmann, F. Bertram, A. Hangleiter, J. Christen, A. Waag] The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many reported fabrication methods, especially for ZnO nanorods are mostly based on catalyst-assisted growth techniques that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on catalyst-free vapour-phase epitaxy growth of ZnO nanorods on 6H-SiC and (11-20)Al2O3 using purely elemental sources at relatively low temperatures and growth pressure. ZnO nanorods with widths of 80-900nm and lengths of up to 12μm were obtained. Nanorod density on the order of 109cm-2 with homogenous luminescence and high purity was also noted. Springer-Verlag, 2007 Mofor A.C. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Bakin A.S. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Elshaer A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Fuhrmann D. Institute of Applied Physics, Technical University Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut Bertram F. Department of Solid State Physics, University of Magdeburg, Universitätsplatz 2, 39106, Magdeburg, Germany aut Hangleiter A. Institute of Applied Physics, Technical University Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut Christen J. Department of Solid State Physics, University of Magdeburg, Universitätsplatz 2, 39106, Magdeburg, Germany aut Waag A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut Applied Physics A Springer-Verlag 88/1(2007-07-01), 17-20 0947-8396 88:1<17 2007 88 339 https://doi.org/10.1007/s00339-007-3961-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3961-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mofor A.C. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Bakin A.S. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Elshaer A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Fuhrmann D. Institute of Applied Physics, Technical University Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Bertram F. Department of Solid State Physics, University of Magdeburg, Universitätsplatz 2, 39106, Magdeburg, Germany aut NATIONALLICENCE 700 1- Hangleiter A. Institute of Applied Physics, Technical University Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Christen J. Department of Solid State Physics, University of Magdeburg, Universitätsplatz 2, 39106, Magdeburg, Germany aut NATIONALLICENCE 700 1- Waag A. Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/1(2007-07-01), 17-20 0947-8396 88:1<17 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer