caa a22 4500 463211324 CHVBK 20180405153141.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-4072-z doi (NATIONALLICENCE)springer-10.1007/s00339-007-4072-z Interface photovoltage dynamics at the buried BaF2/Si interface: Time resolved laser-pump/synchrotron-probe photoemission [Elektronische Daten] [A. Pietzsch, A. Föhlisch, F. Hennies, S. Vijayalakshmi, W. Wurth] Photon-induced band bending changes and subsequent relaxation at the buried insulator/semiconductor interface of BaF2/Si(001) have been investigated. This is achieved by creating free charge carriers through absorption of a visible pump laser pulse (λ=532nm, E=2.33eV) in the silicon, followed by time resolved photoelectron spectroscopy using vacuum-ultraviolet synchrotron radiation (E=18eV) as a probe of the BaF2 valence band (VB). Since the excitation takes place in the semiconductor and the probe photoemission signal originates from the BaF2, the relaxation at the interface has been probed. Springer-Verlag, 2007 Pietzsch A. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut Föhlisch A. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut Hennies F. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut Vijayalakshmi S. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut Wurth W. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut Applied Physics A Springer-Verlag 88/3(2007-08-01), 587-592 0947-8396 88:3<587 2007 88 339 https://doi.org/10.1007/s00339-007-4072-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4072-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pietzsch A. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut NATIONALLICENCE 700 1- Föhlisch A. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut NATIONALLICENCE 700 1- Hennies F. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut NATIONALLICENCE 700 1- Vijayalakshmi S. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut NATIONALLICENCE 700 1- Wurth W. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/3(2007-08-01), 587-592 0947-8396 88:3<587 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer