caa a22 4500 463211464 CHVBK 20180405153142.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4062-1 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4062-1 Microstructural evolution and electrical properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 substrates by excimer-laser assisted metal-organic deposition [Elektronische Daten] [K. Daoudi, T. Tsuchiya, T. Kumagai] Thin films of La0.7Ca0.3MnO3 were successfully grown epitaxially on (100) single-crystal SrTiO3 substrates by excimer-laser assisted metal-organic deposition. Initial amorphous LCMO thin films were obtained by metal-organic deposition at 500°C. Crystallization and epitaxial growth of the films was achieved using a KrF pulsed laser irradiation while the film/substrate samples were kept at 500°C. High resolution transmission electron microscopy observations on cross-sections demonstrate the formation mechanism of the epitaxial films. The crystallization process starts at the LCMO/STO interface and grows by increasing the number of laser shots. A fully crystallized film was obtained after 5min of irradiation. The film/substrate interface was found to be sharp and abrupt. The temperature dependence of the resistance R(T) shows various behaviors, starting from insulating to semiconducting and metal-insulator transition material during the formation of the manganite film. The oxygen content was also improved by increasing the irradiation time. Promising values of the temperature coefficient of resistance were obtained from these manganite films for prospect integration in silicon based microbolometric devices. Springer-Verlag, 2007 Daoudi K. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan aut Tsuchiya T. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan aut Kumagai T. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 639-642 0947-8396 88:4<639 2007 88 339 https://doi.org/10.1007/s00339-007-4062-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4062-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Daoudi K. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan aut NATIONALLICENCE 700 1- Tsuchiya T. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan aut NATIONALLICENCE 700 1- Kumagai T. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565, Tsukuba, Japan aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 639-642 0947-8396 88:4<639 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer