caa a22 4500 463211545 CHVBK 20180405153142.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4022-9 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4022-9 Effect of thermal strain on structure and polarization fatigue of CSD-derived PbZr0.53Ti0.47O3/LaNiO3 hetero-structures [Elektronische Daten] [G.S. Wang, D. Rémiens, E. Dogheche, X.L. Dong] PbZr0.53Ti0.47O3/LaNiO3 (PZT/LNO) hetero-structures have been successfully deposited on MgO, SrTiO3, Al2O3 and Si substrate by chemical solution routes, respectively. The X-ray diffraction measurements show that out-of-plane lattice parameters of PZT increase as increase of thermal expansion coefficient of substrate. Polarization fatigues of Pt/PZT/LNO capacitors are strongly affected by the thermal strain caused by difference of thermal expansion coefficient between PZT and substrate materials. High fatigue resistance of Pt/PZT/LNO can be obtained by using substrate with similar thermal expansion coefficient as PZT. Springer-Verlag, 2007 Wang G.S. Research Centre for Information Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, 200050, Shanghai, P.R. China aut Rémiens D. Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) (UMR-CNRS 8520), Matériaux et Intégration pour la Microélectronique et les Microsystèmes, Bat. P3, Cité scientifique, 59655, Villeneuve d'Ascq, France aut Dogheche E. Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) (UMR-CNRS 8520), Matériaux et Intégration pour la Microélectronique et les Microsystèmes, Bat. P3, Cité scientifique, 59655, Villeneuve d'Ascq, France aut Dong X.L. Research Centre for Information Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, 200050, Shanghai, P.R. China aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 657-660 0947-8396 88:4<657 2007 88 339 https://doi.org/10.1007/s00339-007-4022-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4022-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang G.S. Research Centre for Information Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, 200050, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Rémiens D. Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) (UMR-CNRS 8520), Matériaux et Intégration pour la Microélectronique et les Microsystèmes, Bat. P3, Cité scientifique, 59655, Villeneuve d'Ascq, France aut NATIONALLICENCE 700 1- Dogheche E. Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) (UMR-CNRS 8520), Matériaux et Intégration pour la Microélectronique et les Microsystèmes, Bat. P3, Cité scientifique, 59655, Villeneuve d'Ascq, France aut NATIONALLICENCE 700 1- Dong X.L. Research Centre for Information Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, 200050, Shanghai, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 657-660 0947-8396 88:4<657 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer