caa a22 4500 463211588 CHVBK 20180405153142.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4021-x doi (NATIONALLICENCE)springer-10.1007/s00339-007-4021-x Influence of different precursor surface layers on Cu(In1-xGax)Se2 thin film solar cells [Elektronische Daten] [W. Liu, Y. Sun, W. Li, C.-J. Li, F.-Y. Li, J.-G. Tian] The properties of Cu(In1-xGax)Se2 (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD, SEM, SIMS, illuminated J-V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further improved. Springer-Verlag, 2007 Liu W. The MOE Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, 300457, Tianjin, P.R. China aut Sun Y. Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut Li W. Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut Li C.-J Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut Li F.-Y Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut Tian J.-G The MOE Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, 300457, Tianjin, P.R. China aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 653-656 0947-8396 88:4<653 2007 88 339 https://doi.org/10.1007/s00339-007-4021-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4021-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liu W. The MOE Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, 300457, Tianjin, P.R. China aut NATIONALLICENCE 700 1- Sun Y. Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut NATIONALLICENCE 700 1- Li W. Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut NATIONALLICENCE 700 1- Li C.-J Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut NATIONALLICENCE 700 1- Li F.-Y Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, 300071, Tianjin, P.R. China aut NATIONALLICENCE 700 1- Tian J.-G The MOE Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, and Tianjin Key Lab of Photonics Materials and Technology for Information Science, Nankai University, 300457, Tianjin, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 653-656 0947-8396 88:4<653 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer