<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">46321174X</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180405153143.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170326e20070901xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s00339-007-4032-7</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s00339-007-4032-7</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="0">
   <subfield code="a">Sacrificial etching of AlxGa1-xAs for III-V MEMS surface micromachining</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[P. Kumar, S. Kanakaraju, D.L. DeVoe]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">A study of AlxGa1-xAs as a sacrificial film for surface micromachining is presented. AlxGa1-xAs etch rate and selectivity are measured over a range of aluminum mole fractions and HF etchant concentrations during the release of structural features up to 500μm in width. The etch process is found to be diffusion limited, with an inverse power law relationship between etch depth and etch rate. Excellent selectivity greater than 105 is achieved between sacrificial AlAs and structural GaAs, even for long etches up to 250μm in length. Compared with previous studies of AlxGa1-xAs etching for epitaxial liftoff processing, measured etch rates for surface micromachining are approximately an order of magnitude lower, primarily due to the longer effective etch lengths required. However, unlike epitaxial liftoff, AlxGa1-xAs surface micromachining is compatible with higher HF concentrations which can provide comparable overall etch rates, with important implications for AlGaAs MEMS fabrication.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">Springer-Verlag, 2007</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Kumar</subfield>
   <subfield code="D">P.</subfield>
   <subfield code="u">Department of Mechanical Engineering, University of Maryland, 20742, College Park, MD, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Kanakaraju</subfield>
   <subfield code="D">S.</subfield>
   <subfield code="u">Laboratory for Physical Sciences, 8050 Greenmead Drive, 20740, College Park, MD, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">DeVoe</subfield>
   <subfield code="D">D.L.</subfield>
   <subfield code="u">Department of Mechanical Engineering, University of Maryland, 20742, College Park, MD, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Applied Physics A</subfield>
   <subfield code="d">Springer-Verlag</subfield>
   <subfield code="g">88/4(2007-09-01), 711-714</subfield>
   <subfield code="x">0947-8396</subfield>
   <subfield code="q">88:4&lt;711</subfield>
   <subfield code="1">2007</subfield>
   <subfield code="2">88</subfield>
   <subfield code="o">339</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s00339-007-4032-7</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s00339-007-4032-7</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Kumar</subfield>
   <subfield code="D">P.</subfield>
   <subfield code="u">Department of Mechanical Engineering, University of Maryland, 20742, College Park, MD, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Kanakaraju</subfield>
   <subfield code="D">S.</subfield>
   <subfield code="u">Laboratory for Physical Sciences, 8050 Greenmead Drive, 20740, College Park, MD, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">DeVoe</subfield>
   <subfield code="D">D.L.</subfield>
   <subfield code="u">Department of Mechanical Engineering, University of Maryland, 20742, College Park, MD, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Applied Physics A</subfield>
   <subfield code="d">Springer-Verlag</subfield>
   <subfield code="g">88/4(2007-09-01), 711-714</subfield>
   <subfield code="x">0947-8396</subfield>
   <subfield code="q">88:4&lt;711</subfield>
   <subfield code="1">2007</subfield>
   <subfield code="2">88</subfield>
   <subfield code="o">339</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
