caa a22 4500 463211758 CHVBK 20180405153143.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4028-3 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4028-3 CVD growth of carbon nanotubes at very low pressure of acetylene [Elektronische Daten] [Y.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, S. Guéron, M. Kobylko, M. Kociak, H. Bouchiat, V. Agache, A.S. Rollier, L. Buchaillot, A.M. Bonnot, A.Y. Kasumov] We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport measurements. Springer-Verlag, 2007 Kasumov Y.A. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut Shailos A. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut Khodos I.I. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut Volkov V.T. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut Levashov V.I. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut Matveev V.N. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut Guéron S. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut Kobylko M. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut Kociak M. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut Bouchiat H. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut Agache V. Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d'Ascq, France aut Rollier A.S. Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d'Ascq, France aut Buchaillot L. Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d'Ascq, France aut Bonnot A.M. Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, 38042, Grenoble Cedex, France aut Kasumov A.Y. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 687-691 0947-8396 88:4<687 2007 88 339 https://doi.org/10.1007/s00339-007-4028-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4028-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kasumov Y.A. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut NATIONALLICENCE 700 1- Shailos A. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut NATIONALLICENCE 700 1- Khodos I.I. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut NATIONALLICENCE 700 1- Volkov V.T. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut NATIONALLICENCE 700 1- Levashov V.I. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut NATIONALLICENCE 700 1- Matveev V.N. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut NATIONALLICENCE 700 1- Guéron S. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut NATIONALLICENCE 700 1- Kobylko M. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut NATIONALLICENCE 700 1- Kociak M. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut NATIONALLICENCE 700 1- Bouchiat H. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France aut NATIONALLICENCE 700 1- Agache V. Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d'Ascq, France aut NATIONALLICENCE 700 1- Rollier A.S. Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d'Ascq, France aut NATIONALLICENCE 700 1- Buchaillot L. Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d'Ascq, France aut NATIONALLICENCE 700 1- Bonnot A.M. Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, 38042, Grenoble Cedex, France aut NATIONALLICENCE 700 1- Kasumov A.Y. Institute of Microelectronics Technology and High Purity Materials, 142432, RAS, Chernogolovka, Moscow region, Russia aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 687-691 0947-8396 88:4<687 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer