caa a22 4500 463211804 CHVBK 20180405153143.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4082-x doi (NATIONALLICENCE)springer-10.1007/s00339-007-4082-x Process characterization and statistical analysis of oxide CMP on a silicon wafer with sparse data [Elektronische Daten] [S.T.S. Bukkapatnam, P.K. Rao, W.-C. Lih, N. Chandrasekaran, R. Komanduri] Continuous advancements in chemical mechanical planarization (CMP) process, such as new polishing pads, slurry materials, and abrasive particles necessitate optimization of the key process input parameters for maximum material removal rate (MRR) and/or minimum within wafer non-uniformity (WIWNU) using sparse experimental results. In this investigation a methodology is proposed for developing process models and optimization of input parameters (both main and interaction parameters) for maximum MRR and minimum WIWNU. This approach will be equally applicable for polishing other materials, such as copper, dielectrics and low-k materials. Complex relationships exist between several machine-specific and material-specific input parameters and the output performance variables, chiefly MRR and WIWNU. However, only a few of the input parameters are changed on a regular basis. Hence, only those subsets of relationships need to be considered for optimizing the CMP process. In this investigation, CMP process was characterized for polishing a thin layer of silicon dioxide on top of a silicon wafer. Statistical analysis of the experimental data was performed to obtain the order of significance of the input variables (machine and material parameters and their interactions). Both linear and logarithmic regression models were developed and used to determine optimum process conditions for maximizing MRR and minimizing WIWNU. While the main input parameters were responsible for maximum MRR, interaction parameters were found to be responsible for minimizing WIWNU. This may vary for different materials and polishing environments. Springer-Verlag, 2007 Bukkapatnam S.T.S. Oklahoma State University, 74078, Stillwater, OK, USA aut Rao P.K. Oklahoma State University, 74078, Stillwater, OK, USA aut Lih W.-C Oklahoma State University, 74078, Stillwater, OK, USA aut Chandrasekaran N. Micron Technology Inc., 83716, Boise, ID, USA aut Komanduri R. Oklahoma State University, 74078, Stillwater, OK, USA aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 785-792 0947-8396 88:4<785 2007 88 339 https://doi.org/10.1007/s00339-007-4082-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4082-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bukkapatnam S.T.S. Oklahoma State University, 74078, Stillwater, OK, USA aut NATIONALLICENCE 700 1- Rao P.K. Oklahoma State University, 74078, Stillwater, OK, USA aut NATIONALLICENCE 700 1- Lih W.-C Oklahoma State University, 74078, Stillwater, OK, USA aut NATIONALLICENCE 700 1- Chandrasekaran N. Micron Technology Inc., 83716, Boise, ID, USA aut NATIONALLICENCE 700 1- Komanduri R. Oklahoma State University, 74078, Stillwater, OK, USA aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 785-792 0947-8396 88:4<785 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer