caa a22 4500 463211812 CHVBK 20180405153143.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4069-7 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4069-7 Characterization and electrical properties of high- k GdScO3 thin films grown by atomic layer deposition [Elektronische Daten] [P. Myllymäki, M. Roeckerath, M. Putkonen, S. Lenk, J. Schubert, L. Niinistö, S. Mantl] Gadolinium scandium oxide (Gd-scandate, GdScO3) thin films were grown by atomic layer deposition (ALD) from β-diketonate precursors M(thd)3 (M=Gd, Sc; thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and ozone. The deposition parameters were optimized to produce films with the stoichiometric 1:1 metal ratio and a series of samples with nominal thicknesses of 5, 10, 15, and 20nm were prepared. At 300°C the metal precursor pulsing ratio Gd:Sc=5:6 yielded amorphous stoichiometric films and a growth rate of 0.21Å/cycle. The films stayed amorphous up to 900°C. The surface was probed with an AFM and the rms roughness was found to be 0.3nm for the 5-20nm thick films. The electrical properties of the as-deposited films proved to be very promising, with a dielectric constant of ∼22 and leakage current density of 340μA/cm2, measured at -2V. Springer-Verlag, 2007 Myllymäki P. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015, Espoo, Finland aut Roeckerath M. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut Putkonen M. Beneq Oy, Ensimmäinen Savu, 01510, Vantaa, Finland aut Lenk S. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut Schubert J. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut Niinistö L. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015, Espoo, Finland aut Mantl S. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 633-637 0947-8396 88:4<633 2007 88 339 https://doi.org/10.1007/s00339-007-4069-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4069-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Myllymäki P. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015, Espoo, Finland aut NATIONALLICENCE 700 1- Roeckerath M. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Putkonen M. Beneq Oy, Ensimmäinen Savu, 01510, Vantaa, Finland aut NATIONALLICENCE 700 1- Lenk S. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Schubert J. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Niinistö L. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015, Espoo, Finland aut NATIONALLICENCE 700 1- Mantl S. Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 633-637 0947-8396 88:4<633 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer