caa a22 4500 463211855 CHVBK 20180405153143.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s00339-007-4053-2 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4053-2 Improved photoluminescence of pulsed-laser-ablated Y1-xGdxVO4:Eu3+ thin film phosphors by Gd substitution [Elektronische Daten] [K.S. Shim, H.K. Yang, B.K. Moon, J.H. Jeong, S.S. Yi, K.H. Kim] Gd-substituted Y1-xGdxVO4:Eu3+ luminescent thin films have been grown on Al2O3(0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from Y1-xGdxVO4:Eu3+ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than the crystallinity of the films. In particular, the incorporation of Gd into the YVO4 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y0.57Gd0.40Eu0.03VO4 thin film whose brightness was increased by a factor of 2.5 and 1.9 in comparison with that of YVO4:Eu3+ and GdVO4:Eu3+ films, respectively. This phosphor have application to flat panel displays. Springer-Verlag, 2007 Shim K.S. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut Yang H.K. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut Moon B.K. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut Jeong J.H. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut Yi S.S. Department of Photonics, Nano Applied Research Center, Silla University, 617-736, Busan, South Korea aut Kim K.H. School of Materials Science and Engineering, Pusan National University, 609-735, Busan, South Korea aut Applied Physics A Springer-Verlag 88/4(2007-09-01), 623-626 0947-8396 88:4<623 2007 88 339 https://doi.org/10.1007/s00339-007-4053-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4053-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shim K.S. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut NATIONALLICENCE 700 1- Yang H.K. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut NATIONALLICENCE 700 1- Moon B.K. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut NATIONALLICENCE 700 1- Jeong J.H. Department of Physics, Pukyong National University, 608-737, Busan, South Korea aut NATIONALLICENCE 700 1- Yi S.S. Department of Photonics, Nano Applied Research Center, Silla University, 617-736, Busan, South Korea aut NATIONALLICENCE 700 1- Kim K.H. School of Materials Science and Engineering, Pusan National University, 609-735, Busan, South Korea aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/4(2007-09-01), 623-626 0947-8396 88:4<623 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer