caa a22 4500 46321188X CHVBK 20180405153143.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-3997-6 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3997-6 Monte Carlo simulation studies of sidewall roughening during reactive ion etching [Elektronische Daten] [S.K. Pani, F. Tjiptoharsono, C.C. Wong, C.S. Premachandran, P.V. Ramama, M.K. Iyer] The evolution of sidewall roughness (SWR) during reactive ion etching (RIE) was simulated using a Monte Carlo method. It was discovered that the sidewall roughness established during an earlier etch period represents a historical archive of the moment during which the etch front passes by and is not affected by further etching. We also found that the behavior of SWR follows two distinct trends. At the initial stages, SWR increases with etch time, or its equivalent, the etch depth, but, beyond a certain etch depth, SWR of etched surfaces stabilizes and does not change with further etching. This is related to the change of the number of shadowing and reemitted particles as the etch depth increases. When the shadowing sticking coefficient decreases significantly, SWR increases beyond a certain critical depth due to reemission. Additionally, the noise also increases as the sticking coefficient decreases because of an increased number of reemitted particles. The simulated results support very well the assertions and mechanisms of the experimental findings and an etch model based on shadowing and first-order reemission effects at low RIE pressure. Springer-Verlag, 2007 Pani S.K. School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore aut Tjiptoharsono F. School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore aut Wong C.C. School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore aut Premachandran C.S. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore, Singapore aut Ramama P.V. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore, Singapore aut Iyer M.K. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore, Singapore aut Applied Physics A Springer-Verlag 88/2(2007-08-01), 401-407 0947-8396 88:2<401 2007 88 339 https://doi.org/10.1007/s00339-007-3997-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3997-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pani S.K. School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Tjiptoharsono F. School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Wong C.C. School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Premachandran C.S. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 700 1- Ramama P.V. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 700 1- Iyer M.K. Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/2(2007-08-01), 401-407 0947-8396 88:2<401 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer