caa a22 4500 463211928 CHVBK 20180405153144.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-4002-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4002-0 Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route [Elektronische Daten] [Dhananjay,, Satyendra Singh, J. Nagaraju, S.B. Krupanidhi] Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500°C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15μC/cm2 and 20kV/cm, respectively, confirming the presence of ferroelectricity. Springer-Verlag, 2007 Dhananjay, Department of Instrumentation, Indian Institute of Science, CV Raman Avenue, 560012, Bangalore, India aut Singh Satyendra Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut Nagaraju J. Department of Instrumentation, Indian Institute of Science, CV Raman Avenue, 560012, Bangalore, India aut Krupanidhi S.B. Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut Applied Physics A Springer-Verlag 88/2(2007-08-01), 421-424 0947-8396 88:2<421 2007 88 339 https://doi.org/10.1007/s00339-007-4002-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4002-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dhananjay Department of Instrumentation, Indian Institute of Science, CV Raman Avenue, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Singh Satyendra Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Nagaraju J. Department of Instrumentation, Indian Institute of Science, CV Raman Avenue, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Krupanidhi S.B. Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/2(2007-08-01), 421-424 0947-8396 88:2<421 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer