caa a22 4500 463211987 CHVBK 20180405153144.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-4006-9 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4006-9 Microstructures and thermoelectric properties of GeSbTe based layered compounds [Elektronische Daten] [F. Yan, T.J. Zhu, X.B. Zhao, S.R. Dong] Microstructures and thermoelectric properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge2Sb2Te5 compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge1Sb2Te4 and Ge2Sb2Te5 attained 0.975×10-3W m-1K-2 at 750K and 0.767×10-3W m-1K-2 at 643K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. Springer-Verlag, 2007 Yan F. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut Zhu T.J. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut Zhao X.B. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut Dong S.R. Department of Information and Electronics Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut Applied Physics A Springer-Verlag 88/2(2007-08-01), 425-428 0947-8396 88:2<425 2007 88 339 https://doi.org/10.1007/s00339-007-4006-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4006-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yan F. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 700 1- Zhu T.J. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 700 1- Zhao X.B. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 700 1- Dong S.R. Department of Information and Electronics Engineering, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/2(2007-08-01), 425-428 0947-8396 88:2<425 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer