caa a22 4500 463212088 CHVBK 20180405153144.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-4010-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4010-0 Double-peak droplet mass distribution observed during sub-ps laser ablation of Si targets [Elektronische Daten] [L. Cultrera, A. Dima, A. Perrone, D. Pisignano, R. Cingolani, A. Klini] The angular distribution of the ablated material was studied during sub-ps Si laser ablation deposition using a special hemicylindrical substrate holder and different laser fluences ranging between 0.4 and 1.7J/cm2. Scanning electron microscopy analysis of the deposited films showed that, independent of the fluence, the distribution of the deposited droplets presents two maxima. The first maximum corresponds to the average plume deflection angle value due to the local surface orientation produced by the preferential etching process. The second maximum is observed approximately at 45° with respect to the normal of the target surface, and is related to the phase explosion products that expand along the incident laser beam direction. The investigation of the twofold distribution of the sub-μm size deposited droplets is important to improve the quality of the deposited coatings. Springer-Verlag, 2007 Cultrera L. National Laboratories of Frascati, INFN, via E. Fermi 40, 00044, Frascati, Italy aut Dima A. Physics Department and INFN, University of Salento, Via Arnesano, 73100, Lecce, Italy aut Perrone A. Physics Department and INFN, University of Salento, Via Arnesano, 73100, Lecce, Italy aut Pisignano D. c/o Dipartimento di Ingegneria dell'Innovazione, NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), Via Arnesano, 73100, Lecce, Italy aut Cingolani R. c/o Dipartimento di Ingegneria dell'Innovazione, NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), Via Arnesano, 73100, Lecce, Italy aut Klini A. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology - Hellas (FORTH), P.O. Box 1527, 71110, Heraklion, Crete, Greece aut Applied Physics A Springer-Verlag 88/2(2007-08-01), 435-438 0947-8396 88:2<435 2007 88 339 https://doi.org/10.1007/s00339-007-4010-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4010-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Cultrera L. National Laboratories of Frascati, INFN, via E. Fermi 40, 00044, Frascati, Italy aut NATIONALLICENCE 700 1- Dima A. Physics Department and INFN, University of Salento, Via Arnesano, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Perrone A. Physics Department and INFN, University of Salento, Via Arnesano, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Pisignano D. c/o Dipartimento di Ingegneria dell'Innovazione, NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), Via Arnesano, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Cingolani R. c/o Dipartimento di Ingegneria dell'Innovazione, NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), Via Arnesano, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Klini A. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology - Hellas (FORTH), P.O. Box 1527, 71110, Heraklion, Crete, Greece aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/2(2007-08-01), 435-438 0947-8396 88:2<435 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer