caa a22 4500 46321210X CHVBK 20180405153144.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-3993-x doi (NATIONALLICENCE)springer-10.1007/s00339-007-3993-x Molecular dynamics simulations of reactive etching of SiC by energetic fluorine [Elektronische Daten] [F. Gou, L.Z.T. Chen, C. Meng, Q. Qian] Molecular dynamics simulations were performed to investigate F continuously bombarding Si-terminated 3C-SiC(001) surfaces with incident energies of 10, 100 and 200eV at normal incidence and room temperature. For an energy of 10eV, deposition only occurs on the surface. For energies larger than 10eV, accompanying the saturation of F uptake, a balance between F deposition from the incident atoms and F removal from the fluorinated substrate is established, while the steady-state etching is reached. The simulated results demonstrate that Si atoms in SiC are preferentially etched, which is in good agreement with experiments. The preferential etching of Si results in formation of a C-rich interfacial layer whose thickness increases with increasing incident energy. The analysis shows that Si-containing etch products are dominant. Springer-Verlag, 2007 Gou F. School of Computer Science and Technology, 550025, Guizhou Province, P.R. China aut Chen L.Z.T. School of Computer Science and Technology, 550025, Guizhou Province, P.R. China aut Meng C. School of Computer Science and Technology, 550025, Guizhou Province, P.R. China aut Qian Q. School of Electronic Science and Information Technology, 550025, Guizhou Province, P.R. China aut Applied Physics A Springer-Verlag 88/2(2007-08-01), 385-390 0947-8396 88:2<385 2007 88 339 https://doi.org/10.1007/s00339-007-3993-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3993-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gou F. School of Computer Science and Technology, 550025, Guizhou Province, P.R. China aut NATIONALLICENCE 700 1- Chen L.Z.T. School of Computer Science and Technology, 550025, Guizhou Province, P.R. China aut NATIONALLICENCE 700 1- Meng C. School of Computer Science and Technology, 550025, Guizhou Province, P.R. China aut NATIONALLICENCE 700 1- Qian Q. School of Electronic Science and Information Technology, 550025, Guizhou Province, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/2(2007-08-01), 385-390 0947-8396 88:2<385 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer