caa a22 4500 463212142 CHVBK 20180405153144.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s00339-007-3996-7 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3996-7 Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation [Elektronische Daten] [C. David, B. Sundaravel, T.R. Ravindran, K.G.M. Nair, B.K. Panigrahi, H.P. Lenka, B. Joseph, D.P. Mahapatra] Germanium atomic (Ge1 +) and molecular ions (Ge2 +) of equal energy per atom are implanted in silicon at an elevated temperature. The ion induced damage has been monitored by following the intensity variation of the LO Raman peak of Si. The germanium implanted samples have been labeled with 10keV Au ions. The gettering of gold has been observed by Rutherford backscattering spectrometry in the post-annealed samples. This paper reports a first time observation of an enhanced gettering of gold in silicon implanted with molecular ions. Springer-Verlag, 2007 David C. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Sundaravel B. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Ravindran T.R. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Nair K.G.M. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Panigrahi B.K. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Lenka H.P. Institute of Physics, 751005, Bhubaneswar, India aut Joseph B. Institute of Physics, 751005, Bhubaneswar, India aut Mahapatra D.P. Institute of Physics, 751005, Bhubaneswar, India aut Applied Physics A Springer-Verlag 88/2(2007-08-01), 397-400 0947-8396 88:2<397 2007 88 339 https://doi.org/10.1007/s00339-007-3996-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3996-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- David C. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Sundaravel B. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Ravindran T.R. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Nair K.G.M. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Panigrahi B.K. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Lenka H.P. Institute of Physics, 751005, Bhubaneswar, India aut NATIONALLICENCE 700 1- Joseph B. Institute of Physics, 751005, Bhubaneswar, India aut NATIONALLICENCE 700 1- Mahapatra D.P. Institute of Physics, 751005, Bhubaneswar, India aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 88/2(2007-08-01), 397-400 0947-8396 88:2<397 2007 88 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer