caa a22 4500 463212460 CHVBK 20180405153145.0 cr unu---uuuuu 170326e20071001xx s 000 0 eng 10.1007/s00339-007-4077-7 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4077-7 Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate [Elektronische Daten] [J. Sun, J. Chen, X. Wang, J. Wang, W. Liu, J. Zhu, H. Yang] GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch. Springer-Verlag, 2007 Sun J. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China aut Chen J. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China aut Wang X. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China aut Wang J. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut Liu W. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut Zhu J. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut Yang H. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut Applied Physics A Springer-Verlag 89/1(2007-10-01), 177-181 0947-8396 89:1<177 2007 89 339 https://doi.org/10.1007/s00339-007-4077-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4077-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sun J. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Chen J. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Wang X. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Wang J. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut NATIONALLICENCE 700 1- Liu W. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut NATIONALLICENCE 700 1- Zhu J. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut NATIONALLICENCE 700 1- Yang H. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/1(2007-10-01), 177-181 0947-8396 89:1<177 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer