caa a22 4500 463212509 CHVBK 20180405153145.0 cr unu---uuuuu 170326e20071001xx s 000 0 eng 10.1007/s00339-007-4207-2 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4207-2 Electroluminescence in SrTiO3:Cr single-crystal nonvolatile memory cells [Elektronische Daten] [S.F. Alvarado, F. La Mattina, J.G. Bednorz] Metal-insulator-metal (M-I-M) structures involving transition-metal oxides and, more recently, also perovskite oxides with resistive switching effects have attracted substantial interest in research aimed at nonvolatile memories of nanometer dimensions. Although some models are presently under discussion, it is still not clear whether the fundamental switching mechanism is an interface or a bulk property, or a combination of both. Extended defects, such as dislocation lines and changes in the oxygen vacancy concentration, are considered responsible for the conducting state, and local reduction/oxidation processes have been proposed to be responsible for the resistive switching. In addition, the role of dopants has not been discussed in depth. Here we report on an electric-field-controlled electron trapping/detrapping process involved in the resistive switching in Cr-doped SrTiO3. Electroluminescence (EL) measurements reveal that during resistive switching, light emission is observed only in the switching transition from high to low conductivity. The EL spectrum is typical for Cr3+ in an octahedral ligand field, indicating that the switching process involves trapping/detrapping of electrons at the Cr site. With increasing conductivity of SrTiO3, we observe a change from the predominant $^{2}{E}\to^{4}{A}_{2g}$ (R-line) to the vibronically red-shifted $^{4}{T}_{2}\to^{4}{A}_{2g}$ transition, which points to a modification of the Cr-occupied lattice sites. Springer-Verlag, 2007 Alvarado S.F. Zürich Research Laboratory, IBM Research, Säumerstr. 4, 8803, Rüschlikon, Switzerland aut La Mattina F. Zürich Research Laboratory, IBM Research, Säumerstr. 4, 8803, Rüschlikon, Switzerland aut Bednorz J.G. Zürich Research Laboratory, IBM Research, Säumerstr. 4, 8803, Rüschlikon, Switzerland aut Applied Physics A Springer-Verlag 89/1(2007-10-01), 85-89 0947-8396 89:1<85 2007 89 339 https://doi.org/10.1007/s00339-007-4207-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4207-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Alvarado S.F. Zürich Research Laboratory, IBM Research, Säumerstr. 4, 8803, Rüschlikon, Switzerland aut NATIONALLICENCE 700 1- La Mattina F. Zürich Research Laboratory, IBM Research, Säumerstr. 4, 8803, Rüschlikon, Switzerland aut NATIONALLICENCE 700 1- Bednorz J.G. Zürich Research Laboratory, IBM Research, Säumerstr. 4, 8803, Rüschlikon, Switzerland aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/1(2007-10-01), 85-89 0947-8396 89:1<85 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer