caa a22 4500 463212533 CHVBK 20180405153145.0 cr unu---uuuuu 170326e20071001xx s 000 0 eng 10.1007/s00339-007-4038-1 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4038-1 Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors [Elektronische Daten] [R. Martins, P. Barquinha, L. Pereira, I. Ferreira, E. Fortunato] This paper aims to discuss the effect of order and disorder on the electrical performances of covalent silicon semiconductors and ZnO based ionic oxide semiconductors used as active channel layers in thin film transistors. The effect of disorder on covalent semiconductors directly affects their electrical transport properties due to the asymmetric behaviour of sp states, while in ionic oxide semiconductors it is found that this effect is small due to the fact that angular disorder has no effect on the spherical symmetry of s states. To this we must add that the mobility of carriers in both systems is quite different, being also affected by electron-phonon interactions (weak in silicon and strong in ionic oxides leading to formation of polarons). Besides, the impurity doping effect and the presence of vacancies in disordered silicon and in ionic oxides behave differently, which will influence the thin film properties and so, the performances of the devices produced. Springer-Verlag, 2007 Martins R. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut Barquinha P. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut Pereira L. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut Ferreira I. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut Fortunato E. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut Applied Physics A Springer-Verlag 89/1(2007-10-01), 37-42 0947-8396 89:1<37 2007 89 339 https://doi.org/10.1007/s00339-007-4038-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4038-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Martins R. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut NATIONALLICENCE 700 1- Barquinha P. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut NATIONALLICENCE 700 1- Pereira L. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut NATIONALLICENCE 700 1- Ferreira I. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut NATIONALLICENCE 700 1- Fortunato E. Materials Science Department, CENIMAT/I3N, Faculty of Science and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica, Portugal aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/1(2007-10-01), 37-42 0947-8396 89:1<37 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer