caa a22 4500 463212770 CHVBK 20180405153146.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s00339-007-4160-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4160-0 Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands [Elektronische Daten] [A. Khan, A. Das] A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field. Springer-Verlag, 2007 Khan A. Electrocom Corporation, P.O. Box 60317, 20859-0317, Potomac, MD, USA aut Das A. Department of Physics and Techno Physics, Vidyasagar University, 721102, Midnapore, West Bengal, India aut Applied Physics A Springer-Verlag 89/3(2007-11-01), 695-699 0947-8396 89:3<695 2007 89 339 https://doi.org/10.1007/s00339-007-4160-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4160-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Khan A. Electrocom Corporation, P.O. Box 60317, 20859-0317, Potomac, MD, USA aut NATIONALLICENCE 700 1- Das A. Department of Physics and Techno Physics, Vidyasagar University, 721102, Midnapore, West Bengal, India aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/3(2007-11-01), 695-699 0947-8396 89:3<695 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer