caa a22 4500 463212835 CHVBK 20180405153146.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s00339-007-4268-2 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4268-2 Femtosecond-laser-induced-crystallization and simultaneous formation of light trapping microstructures in thin a-Si:H films [Elektronische Daten] [B.K. Nayak, M.C. Gupta] We report the observation of crystallization and simultaneous formation of surface microstructures in hydrogenated amorphous silicon (a-Si:H) thin films as one step laser processing. Light trapping microstructures of around 300nm in height were formed on a-Si:H films of thickness in the range of 1.5μm to 2μm deposited on soda lime glass after exposure to femtosecond laser pulses. Scanning electron microscope (SEM) images show the formation of spikes that are around 1μm part and their heights could be controlled by the laser fluences. Atomic force microscope (AFM) images were taken to study the roughness created on the surface. The mean roughness of the textured surface increases with laser fluence at smaller power densities, and for power densities beyond 0.5J/cm2 the film removal deteriorates the texturing. X-ray diffraction results indicate the formation of a nano-crystalline structure with (111) and (311) crystal orientation after the laser treatment. The observed black color and enhanced optical absorption in the near infrared region in laser treated films may be due to a combined effect of light trapping in the micro-structured silicon surface because of multiple total internal reflections, phase change in the film, possible defect sites induced after laser treatment and formation of SiOx. Demonstration of light trapping microstructures in thin a-Si:H films and simultaneous crystallization could provide new opportunities for optoelectronic devices. Springer-Verlag, 2007 Nayak B.K. Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, 22904, Charlottesville, Virginia, USA aut Gupta M.C. Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, 22904, Charlottesville, Virginia, USA aut Applied Physics A Springer-Verlag 89/3(2007-11-01), 663-666 0947-8396 89:3<663 2007 89 339 https://doi.org/10.1007/s00339-007-4268-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4268-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nayak B.K. Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, 22904, Charlottesville, Virginia, USA aut NATIONALLICENCE 700 1- Gupta M.C. Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, 22904, Charlottesville, Virginia, USA aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/3(2007-11-01), 663-666 0947-8396 89:3<663 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer