caa a22 4500 463212916 CHVBK 20180405153147.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s00339-007-4176-5 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4176-5 Influence of boron distribution on the transport of single-walled carbon nanotube [Elektronische Daten] [J.-W. Wei, H.-F. Hu, H. Zeng, Z.-Y. Wang, L. Wang, L.-J. Zhang] Using density functional theory combined with nonequilibrium Green's functions, we investigated and found that boron substitutional doping affects the transport properties of single-walled carbon nanotubes with different distribution. The results reveal that the semiconducting nanotube transits to the quasi-metallic state with nonlinear current-voltage curve after boron doping. Some regular regions of total transmission coefficient with integral values appear with the varying of electron energy and bias voltage. The transport properties of the doped tubes are affected remarkably by the impurity states of quasi-bound defect states which are tuned by the distance between the boron atoms. The current of metallic nanotube is reduced by the impurities and changed with doping patterns. Springer-Verlag, 2007 Wei J.-W College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut Hu H.-F College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut Zeng H. College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut Wang Z.-Y College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut Wang L. College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut Zhang L.-J College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut Applied Physics A Springer-Verlag 89/3(2007-11-01), 789-792 0947-8396 89:3<789 2007 89 339 https://doi.org/10.1007/s00339-007-4176-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4176-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wei J.-W College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut NATIONALLICENCE 700 1- Hu H.-F College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut NATIONALLICENCE 700 1- Zeng H. College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut NATIONALLICENCE 700 1- Wang Z.-Y College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut NATIONALLICENCE 700 1- Wang L. College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut NATIONALLICENCE 700 1- Zhang L.-J College of Physics and Microelectronic Sciences, Hunan University, 410082, Changsha, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/3(2007-11-01), 789-792 0947-8396 89:3<789 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer