caa a22 4500 463213696 CHVBK 20180405153149.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s00339-007-4095-5 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4095-5 Potential barrier inhomogeneities in irradiated Pd/n-SiGe Schottky diodes [Elektronische Daten] [A. Sellai, M. Mamor] Ion implantation, which is an important process in the fabrication of microelectronic devices, is known to have a strong impact on the electrical performance of materials and devices [1]. In this context we study the temperature-dependence of parameters relevant to Pd/Si0.9Ge0.1/Si Schottky diodes subjected to He+ ion implantation. The irradiated Pd/SiGe junction is linearly graded as evidenced by the capacitance-voltage data but the temperature dependence of the diode's ideality factor and barrier height is similar to behavior reported for abrupt junctions. The observed trends, usually described as anomalies, can not be fully explained by considering the combined effects of tunneling, recombination, image-force lowering and/or series resistance. It is shown, however, that when taking barrier height non-homogeneity into account the experimental results can be satisfactorily explained. The barrier height is seen to follow a Gaussian distribution with a mean barrier of 0.8eV and with a standard deviation that appears to be dependent on voltage and also weakly on temperature. It is suggested that the potential barrier deformation itself is temperature dependent at a given bias-voltage with the deformation becoming relatively more pronounced at lower temperatures. Springer-Verlag, 2007 Sellai A. Physics Department, Sultan Qaboos University, P.O. Box 36, P.C. 123, Al Khoud, Oman aut Mamor M. Physics Department, Sultan Qaboos University, P.O. Box 36, P.C. 123, Al Khoud, Oman aut Applied Physics A Springer-Verlag 89/2(2007-11-01), 503-508 0947-8396 89:2<503 2007 89 339 https://doi.org/10.1007/s00339-007-4095-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4095-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sellai A. Physics Department, Sultan Qaboos University, P.O. Box 36, P.C. 123, Al Khoud, Oman aut NATIONALLICENCE 700 1- Mamor M. Physics Department, Sultan Qaboos University, P.O. Box 36, P.C. 123, Al Khoud, Oman aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/2(2007-11-01), 503-508 0947-8396 89:2<503 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer