caa a22 4500 463213769 CHVBK 20180405153150.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s00339-007-4154-y doi (NATIONALLICENCE)springer-10.1007/s00339-007-4154-y The n-type Gd-doped HfO2 to silicon heterojunction diode [Elektronische Daten] [I. Ketsman, Y.B. Losovyj, A. Sokolov, J. Tang, Z. Wang, K.D. Belashchenko, P.A. Dowben] Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO2 due to overcompensation with oxygen vacancies. The Gd 4f photoexcitation peak at 5.5eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode-like) properties of Gd-doped HfO2 to silicon heterojunctions are demonstrated. Springer-Verlag, 2007 Ketsman I. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut Losovyj Y.B. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut Sokolov A. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut Tang J. Department of Physics, University of New Orleans, 70148, New Orleans, LA, USA aut Wang Z. Department of Physics, University of New Orleans, 70148, New Orleans, LA, USA aut Belashchenko K.D. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut Dowben P.A. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut Applied Physics A Springer-Verlag 89/2(2007-11-01), 489-492 0947-8396 89:2<489 2007 89 339 https://doi.org/10.1007/s00339-007-4154-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4154-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ketsman I. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut NATIONALLICENCE 700 1- Losovyj Y.B. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut NATIONALLICENCE 700 1- Sokolov A. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut NATIONALLICENCE 700 1- Tang J. Department of Physics, University of New Orleans, 70148, New Orleans, LA, USA aut NATIONALLICENCE 700 1- Wang Z. Department of Physics, University of New Orleans, 70148, New Orleans, LA, USA aut NATIONALLICENCE 700 1- Belashchenko K.D. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut NATIONALLICENCE 700 1- Dowben P.A. Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, P.O. Box 880111, 68588-0111, Lincoln, NE, USA aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/2(2007-11-01), 489-492 0947-8396 89:2<489 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer