caa a22 4500 463213874 CHVBK 20180405153150.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s00339-007-4108-4 doi (NATIONALLICENCE)springer-10.1007/s00339-007-4108-4 Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applications [Elektronische Daten] [Kai-Huang Chen, Ying-Chung Chen, Zhi-Sheng Chen, Cheng-Fu Yang, Ting-Chang Chang] Ferroelectric thin films of BaTiO3 were successfully deposited on SiO2/Si substrate under the optimal rf magnetron sputtering conditions, and their electrical and ferroelectric characteristics were discussed. The memory window, capacitance, threshold voltage and leakage current density of MFIS structure under different frequencies and temperatures were also reported. The variations of ferroelectric capacitance and threshold voltage would be attributed to the as-deposited BaTiO3 films of MFIS structure as the temperature and frequency increased. Besides, the memory window, threshold voltage and leakage current density would be degraded from 4V, 5V and 8×10-10A/cm2 to 2.5V, 10V and 5×10-4A/cm2, respectively, as the temperature increased from 25to 90°C. Springer-Verlag, 2007 Chen Kai-Huang Department of Electrical Engineering, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C. aut Chen Ying-Chung Department of Electrical Engineering, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C. aut Chen Zhi-Sheng Department of Electrical Engineering, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C. aut Yang Cheng-Fu Department of Chemical and Materials Engineering, Kaohsiung University, 811, Kaohsiung, Taiwan, R.O.C. aut Chang Ting-Chang Department of Physics, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C. aut Applied Physics A Springer-Verlag 89/2(2007-11-01), 533-536 0947-8396 89:2<533 2007 89 339 https://doi.org/10.1007/s00339-007-4108-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-4108-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Kai-Huang Department of Electrical Engineering, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Chen Ying-Chung Department of Electrical Engineering, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Chen Zhi-Sheng Department of Electrical Engineering, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Yang Cheng-Fu Department of Chemical and Materials Engineering, Kaohsiung University, 811, Kaohsiung, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Chang Ting-Chang Department of Physics, National Sun Yat-sen University, 804, Kaohsiung, Taiwan, R.O.C aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 89/2(2007-11-01), 533-536 0947-8396 89:2<533 2007 89 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer