caa a22 4500 463213890 CHVBK 20180405153150.0 cr unu---uuuuu 170326e20070101xx s 000 0 eng 10.1007/s00339-006-3740-8 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3740-8 Room-temperature photoluminescence of doped 4H-SiC film grown on AlN/Si(100) [Elektronische Daten] [T.-T. Han, Y. Fu, H. Ågren, P. Han, Z. Qin, R. Zhang] Well-defined room-temperature photoluminescence (PL) was observed from 4H-SiC films on AlN/Si(100) complex substrates grown at temperatures below 1150°C by the chemical vapor deposition method. The PL spectrum consists of three major emission peaks in the vicinities of 3.03, 3.17 and 3.37eV. By the combination of experimental measurements and theoretical analysis, the origins of the PL emission peaks have been identified and associated with N donors, Al acceptors in the 4H-SiC films and the band-to-band transition between the second minimum of the conduction band and the top of valance band of the 4H-SiC. The room-temperature SiC PL can be much utilized for optoelectronic high-power, high-frequency and high-temperature applications in the ultraviolet spectral regime. Springer-Verlag, 2006 Han T.-T Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, AlbaNova, 10691, Stockholm, Sweden aut Fu Y. Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, AlbaNova, 10691, Stockholm, Sweden aut Ågren H. Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, AlbaNova, 10691, Stockholm, Sweden aut Han P. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, P.R. China aut Qin Z. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, P.R. China aut Zhang R. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, P.R. China aut Applied Physics A Springer-Verlag 86/1(2007-01-01), 145-149 0947-8396 86:1<145 2007 86 339 https://doi.org/10.1007/s00339-006-3740-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3740-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Han T.-T Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, AlbaNova, 10691, Stockholm, Sweden aut NATIONALLICENCE 700 1- Fu Y. Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, AlbaNova, 10691, Stockholm, Sweden aut NATIONALLICENCE 700 1- Ågren H. Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, AlbaNova, 10691, Stockholm, Sweden aut NATIONALLICENCE 700 1- Han P. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, P.R. China aut NATIONALLICENCE 700 1- Qin Z. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, P.R. China aut NATIONALLICENCE 700 1- Zhang R. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/1(2007-01-01), 145-149 0947-8396 86:1<145 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer