caa a22 4500 463213904 CHVBK 20180405153150.0 cr unu---uuuuu 170326e20070101xx s 000 0 eng 10.1007/s00339-006-3724-8 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3724-8 Silicon-germanium interdiffusion and interfaces in self-assembled quantum dots [Elektronische Daten] [R.R. Vanfleet, D.P. Basile, T.I. Kamins, J. Silcox, R. Stanley Williams] A scanning transmission electron microscope (STEM) study of silicon-germanium alloying using annular dark field (ADF) or Z-contrast imaging and electron energy loss spectroscopy (EELS) is presented. Results and techniques are discussed. Growth of 11 equivalent monolayers of germanium on silicon at 650°C results in dome-shaped islands or quantum dots that contain up to ∼40% silicon. The interface between the as-grown island and substrate shows a highly disordered or amorphous zone ∼1.5-nm wide directly under the island. Annealing for 60min at 650°C gives larger pyramidal islands with diffuse crystalline interfaces and an equilibrium distribution of up to ∼70% silicon in the islands. Springer-Verlag, 2006 Vanfleet R.R. School of Applied and Engineering Physics, Cornell University, 14853, Ithaca, NY, USA aut Basile D.P. Agilent Laboratories, 94304, Palo Alto, CA, USA aut Kamins T.I. Hewlett-Packard Laboratories, 94304, Palo Alto, CA, USA aut Silcox J. School of Applied and Engineering Physics, Cornell University, 14853, Ithaca, NY, USA aut Stanley Williams R. Hewlett-Packard Laboratories, 94304, Palo Alto, CA, USA aut Applied Physics A Springer-Verlag 86/1(2007-01-01), 1-9 0947-8396 86:1<1 2007 86 339 https://doi.org/10.1007/s00339-006-3724-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3724-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vanfleet R.R. School of Applied and Engineering Physics, Cornell University, 14853, Ithaca, NY, USA aut NATIONALLICENCE 700 1- Basile D.P. Agilent Laboratories, 94304, Palo Alto, CA, USA aut NATIONALLICENCE 700 1- Kamins T.I. Hewlett-Packard Laboratories, 94304, Palo Alto, CA, USA aut NATIONALLICENCE 700 1- Silcox J. School of Applied and Engineering Physics, Cornell University, 14853, Ithaca, NY, USA aut NATIONALLICENCE 700 1- Stanley Williams R. Hewlett-Packard Laboratories, 94304, Palo Alto, CA, USA aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/1(2007-01-01), 1-9 0947-8396 86:1<1 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer