caa a22 4500 463214099 CHVBK 20180405153151.0 cr unu---uuuuu 170326e20070101xx s 000 0 eng 10.1007/s00339-006-3744-4 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3744-4 Fabrication of high-aspect-ratio silicon nanostructures using near-field scanning optical lithography and silicon anisotropic wet-etching process [Elektronische Daten] [S.J. Kwon, Y.M. Jeong, S.H. Jeong] A new process in which near-field scanning optical lithography (NSOL) is combined with anisotropic wet-etching of (110) silicon is developed for the fabrication of high-aspect-ratio (HAR) nanochannels. In the proposed process, NSOL is applied to produce nanopatterns on a commercial positive photoresist as in an optical lithography. The use of a commercial photoresist is an advantage of this process because it allows the direct application of many photoresists currently available without pretreatment, saving cost and time. A bare (110) silicon wafer coated with a thin Si3N4 layer, of approximately 10nm thickness, is used as the sample and the photoresist is spincoated on the Si3N4 layer to a thickness of about 50-80nm. Nanopatterning of the photoresist using a contact mode NSOL, transfer of the photoresist pattern onto the Si3N4 layer by reactive ion etching, and anisotropic wet etching of the silicon wafer using the patterned Si3N4 layer as an etch mask, lead to the intended HAR nanostructures. Fabrication of silicon nanochannels with a channel width below 150nm and an aspect ratio greater than 3 is demonstrated. Springer-Verlag, 2006 Kwon S.J. Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712, Gwangju, Republic of Korea aut Jeong Y.M. Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712, Gwangju, Republic of Korea aut Jeong S.H. Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712, Gwangju, Republic of Korea aut Applied Physics A Springer-Verlag 86/1(2007-01-01), 11-18 0947-8396 86:1<11 2007 86 339 https://doi.org/10.1007/s00339-006-3744-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3744-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kwon S.J. Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712, Gwangju, Republic of Korea aut NATIONALLICENCE 700 1- Jeong Y.M. Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712, Gwangju, Republic of Korea aut NATIONALLICENCE 700 1- Jeong S.H. Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712, Gwangju, Republic of Korea aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/1(2007-01-01), 11-18 0947-8396 86:1<11 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer