caa a22 4500 463214250 CHVBK 20180405153151.0 cr unu---uuuuu 170326e20070301xx s 000 0 eng 10.1007/s00339-006-3795-6 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3795-6 Thermoelectric properties of higher manganese silicide films with addition of chromium [Elektronische Daten] [Q.R. Hou, W. Zhao, Y.B. Chen, D. Liang, X. Feng, H.Y. Zhang, Y.J. He] Polycrystalline higher manganese silicide (MnSi1.73) films with addition of chromium were prepared on thermally oxidized silicon substrates by magnetron sputtering. A cap layer of chromium disilicide was used as the doping source. Both the Seebeck coefficient and the resistivity were strongly dependent on the amount of chromium added to the film. When the thickness ratio of chromium disilicide to manganese silicide increased from 2.4% to 9.8%, the Seebeck coefficient at room temperature decreased from 121 to 100μV/K. However, the temperature at which the maximum value of the Seebeck coefficient occurred increased from 343 to 633K. When the thickness ratio was about 2.4%, the resistivity increased to 33×10-3Ω cm. Otherwise, the resistivity decreased from 13×10-3 to 5.2×10-3Ω cm by increasing the thickness ratio. As a result, the thermoelectric power factor increased greatly at high temperatures. Several activation energies (0.021-0.383eV) were observed from the curves of the logarithm of resistivity versus reciprocal temperature. Springer-Verlag, 2006 Hou Q.R. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut Zhao W. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut Chen Y.B. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut Liang D. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut Feng X. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut Zhang H.Y. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut He Y.J. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut Applied Physics A Springer-Verlag 86/3(2007-03-01), 385-389 0947-8396 86:3<385 2007 86 339 https://doi.org/10.1007/s00339-006-3795-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3795-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hou Q.R. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 700 1- Zhao W. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 700 1- Chen Y.B. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 700 1- Liang D. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 700 1- Feng X. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 700 1- Zhang H.Y. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 700 1- He Y.J. Department of Physics, Tsinghua University, 100084, Beijing, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/3(2007-03-01), 385-389 0947-8396 86:3<385 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer