caa a22 4500 463214501 CHVBK 20180405153152.0 cr unu---uuuuu 170326e20070301xx s 000 0 eng 10.1007/s00339-006-3804-9 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3804-9 Photoluminescence and persistent photoconductivity of AlxGa1-xN/GaN heterostructures [Elektronische Daten] [S.J. Chung, B. Karunagaran, S. Velumani, C.-H. Hong, H.J. Lee, E.-K. Suh] We have investigated the optical properties of AlxGa1-xN/GaN heterostructures (x=0.08, 0.15, 0.33) grown by metal organic chemical vapor deposition on sapphire using photoluminescence (PL) and persistent photoconductivity (PPC) measurements. For the AlxGa1-xN/GaN heterostructures (HS) containing high Al composition, we observed an anomalous temperature-dependent photoluminescence and persistent photoconductivity effects. These results show a strong dependence of the physical properties of AlxGa1-xN/GaN HS on the Al content and layer thickness. The anomalous temperature-dependent PL is usually attributed to the presence of carrier localization states. These phenomena are explained based on the alloy compositional fluctuations in the AlxGa1-xN/GaN HS. From the PPC measurements, the photocurrent (PC) quenching was observed for AlxGa1-xN/GaN HS and it is explained by the metastable states formed in the underlying GaN layer. Also, the mechanisms behind the PC quenching and PPC phenomena are explained in detail. Springer-Verlag, 2006 Chung S.J. Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut Karunagaran B. Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut Velumani S. Departamento de Física, TEC de Monterrey, Campus Monterrey, E. Garza-Sada 2501, C.P. 64849, Monterrey, N.L., Mexico aut Hong C.-H Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut Lee H.J. Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut Suh E.-K Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut Applied Physics A Springer-Verlag 86/4(2007-03-01), 521-524 0947-8396 86:4<521 2007 86 339 https://doi.org/10.1007/s00339-006-3804-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3804-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chung S.J. Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut NATIONALLICENCE 700 1- Karunagaran B. Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut NATIONALLICENCE 700 1- Velumani S. Departamento de Física, TEC de Monterrey, Campus Monterrey, E. Garza-Sada 2501, C.P. 64849, Monterrey, N.L., Mexico aut NATIONALLICENCE 700 1- Hong C.-H Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut NATIONALLICENCE 700 1- Lee H.J. Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut NATIONALLICENCE 700 1- Suh E.-K Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, 561-756, Chonju, Korea aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/4(2007-03-01), 521-524 0947-8396 86:4<521 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer