caa a22 4500 463214544 CHVBK 20180405153152.0 cr unu---uuuuu 170326e20070301xx s 000 0 eng 10.1007/s00339-006-3777-8 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3777-8 Tunable electronically anisotropic materials with ion-irradiated polysilanes on semiconductor [Elektronische Daten] [D. Fink, A. Chandra, J. Opitz-Coutureau, W.R. Fahrner, K. Hoppe, R.M. Papaleo] Studies on tunable electronically anisotropic material on semiconductor, "TEAMS”, with a polysilane layer spin-coated onto a silicon wafer and then contacted on both top and rear sides, are reported in the present paper. This structure was irradiated with swift heavy ions, and its electrical characteristics were studied both during and after irradiation. It was found that the current/voltage characteristics depend on the ion fluence, the time of voltage application, the gating voltage, the ambient pressure, light, and the post-annealing temperature of the samples. Under specific conditions, a negative differential resistance was also exhibited. The observations are indicative of a peculiar conduction mechanism. Springer-Verlag, 2007 Fink D. Hahn Meitner Institute, Glienicker Strasse 100, 14109, Berlin, Germany aut Chandra A. Hahn Meitner Institute, Glienicker Strasse 100, 14109, Berlin, Germany aut Opitz-Coutureau J. Hahn Meitner Institute, Glienicker Strasse 100, 14109, Berlin, Germany aut Fahrner W.R. Chair of Electronic Devices, University of Hagen, 58084, Hagen, Germany aut Hoppe K. South Westfalia University of Applied Sciences, Hagen, Germany aut Papaleo R.M. Pontificaria Universidade Catolica, Porto Alegre, RS, Brazil aut Applied Physics A Springer-Verlag 86/4(2007-03-01), 469-476 0947-8396 86:4<469 2007 86 339 https://doi.org/10.1007/s00339-006-3777-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3777-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fink D. Hahn Meitner Institute, Glienicker Strasse 100, 14109, Berlin, Germany aut NATIONALLICENCE 700 1- Chandra A. Hahn Meitner Institute, Glienicker Strasse 100, 14109, Berlin, Germany aut NATIONALLICENCE 700 1- Opitz-Coutureau J. Hahn Meitner Institute, Glienicker Strasse 100, 14109, Berlin, Germany aut NATIONALLICENCE 700 1- Fahrner W.R. Chair of Electronic Devices, University of Hagen, 58084, Hagen, Germany aut NATIONALLICENCE 700 1- Hoppe K. South Westfalia University of Applied Sciences, Hagen, Germany aut NATIONALLICENCE 700 1- Papaleo R.M. Pontificaria Universidade Catolica, Porto Alegre, RS, Brazil aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/4(2007-03-01), 469-476 0947-8396 86:4<469 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer