caa a22 4500 463214765 CHVBK 20180405153153.0 cr unu---uuuuu 170326e20070201xx s 000 0 eng 10.1007/s00339-006-3748-0 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3748-0 Fabrication of high-aspect-ratio silicon nanopillar arrays with the conventional reactive ion etching technique [Elektronische Daten] [Y.-F. Chang, Q.-R. Chou, J.-Y. Lin, C.-H. Lee] We fabricate silicon nanopillar arrays with pillar diameters smaller than 200nm by using the conventional reactive ion etching (RIE) technique and nickel masks. We use the ratio between the lateral and vertical etching rates as an estimate of the etching anisotropy. The dependence of this ratio on the rf power, the chamber pressure, and the gas mixture is investigated systematically to achieve the largest etching anisotropy. Using the optimized etching parameters in the RIE process, we demonstrate silicon pillars with smooth surface, vertical sidewalls, and aspect ratios higher than 20. In addition, we employ dilute aqua regia to treat the pillars and shrink the diameters to 70nm. The pillar height remains ∼2500nm after the treatment. Springer-Verlag, 2006 Chang Y.-F Research Center for Applied Sciences, Academia Sinica, 11529, Taipei, Taiwan, R.O.C. aut Chou Q.-R Department of Physics, National Chung Cheng University, 62102, Chia-Yi, Taiwan, R.O.C. aut Lin J.-Y Department of Physics, National Chung Cheng University, 62102, Chia-Yi, Taiwan, R.O.C. aut Lee C.-H Research Center for Applied Sciences, Academia Sinica, 11529, Taipei, Taiwan, R.O.C. aut Applied Physics A Springer-Verlag 86/2(2007-02-01), 193-196 0947-8396 86:2<193 2007 86 339 https://doi.org/10.1007/s00339-006-3748-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3748-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chang Y.-F Research Center for Applied Sciences, Academia Sinica, 11529, Taipei, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Chou Q.-R Department of Physics, National Chung Cheng University, 62102, Chia-Yi, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Lin J.-Y Department of Physics, National Chung Cheng University, 62102, Chia-Yi, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Lee C.-H Research Center for Applied Sciences, Academia Sinica, 11529, Taipei, Taiwan, R.O.C aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/2(2007-02-01), 193-196 0947-8396 86:2<193 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer